High-linearity class B power amplifiers in GaN HEMT technology

摘要

A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that Class B power amplifiers can achieve IM3 suppression comparable to Class A, while providing approximately 10% improved power added efficiency.