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Removal of arsenate with hydrous ferric oxide coprecipitation: Effect of humic acid

机译:含水三氧化二铁共沉淀去除砷酸盐:腐殖酸的作用

摘要

Insights from the adverse effect of humic acid (HA) on arsenate removal with hydrous ferric oxide (HFO) coprecipitation can further our understanding of the fate of As(V) in water treatment process. The motivation of our study is to explore the competitive adsorption mechanisms of humic acid and As(V) on HFO on the molecular scale. Multiple complementary techniques were used including macroscopic adsorption experiments, surface enhanced Raman scattering (SERS), extended X-ray absorption fine structure (EXAFS) spectroscopy, flow-cell attenuated total reflectance Fourier transform infrared (ATR-FTIR) measurement, and charge distribution multisite complexation (CD-MUSIC) modeling. The As(V) removal efficiency was reduced from over 95% to about 10% with the increasing HA concentration to 25 times of As(V) mass concentration. The SERS analysis excluded the HA-As(V) complex formation. The EXAFS results indicate that As(V) formed bidentate binuclear surface complexes in the presence of HA as evidenced by an As-Fe distance of 3.26-3.31 angstrom. The in situ ATR-FTIR measurements show that As(V) replaces surface hydroxyl groups and forms inner-sphere complex. High concentrations of HA may physically block the surface sites and inhibit the As(V) access. The adsorption of As(V) and HA decreased the point of zero charge of HFO from 7.8 to 5.8 and 6.3, respectively. The CD-MUSIC model described the zeta potential curves and adsorption edges of As(V) and HA reasonably well.
机译:从腐殖酸(HA)对含水三氧化二铁(HFO)共沉淀去除砷酸盐的不利影响中获得的见解可以使我们进一步了解水处理过程中As(V)的命运。我们研究的动机是在分子尺度上探索腐殖酸和As(V)在HFO中的竞争性吸附机理。使用了多种互补技术,包括宏观吸附实验,表面增强拉曼散射(SERS),扩展X射线吸收精细结构(EXAFS)光谱,流动池衰减全反射傅里叶变换红外(ATR-FTIR)测量和电荷分布多站点复杂化(CD-MUSIC)建模。随着HA浓度增加到As(V)质量浓度的25倍,As(V)去除效率从超过95%降低到约10%。 SERS分析排除了HA-As(V)配合物的形成。 EXAFS结果表明,在HA存在下,As(V)形成了双齿双核表面复合物,As-Fe距离为3.26-3.31埃证明了这一点。原位ATR-FTIR测量表明,As(V)取代了表面羟基并形成了内球络合物。高浓度的HA可能会物理阻塞表面部位并抑制As(V)的进入。 As(V)和HA的吸附分别将HFO的零电荷点从7.8降低到5.8和6.3。 CD-MUSIC模型很好地描述了Zeta电位曲线以及As(V)和HA的吸附边缘。

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