KINETICS OF INDIUM ATOMIZATION FROM DIFFERENT ATOMIZER SURFACES IN ELECTROTHERMAL ATOMIC-ABSORPTION SPECTROMETRY (ETAAS)

摘要

The kinetic parameters of indium atomization in electrothermal atomic absorption spectrometry (ETAAS) have been determined by a newly proposed method. Effect of the atomizer surface and the palladium modifier on the kinetics of indium atomization has been investigated. The mechanisms of indium atomization seem to bc identical for the pyrolytically coated graphite and the uncoated graphite tubes, i.e. the rate-limiting step for the atomization changes from a first order kinetics at lower temperatures into a nearly 1/3 order kinetics at higher temperatures, which may suggest that the analyte moves from a dispersed state to agglomates with increasing temperature. However, for the zirconium coated graphite tube, the atomization of indium is controlled by a single mechanism with the kinetic order of near 2/3 and the activation energy of 186 +/- 13 kJ/mol. Relatively weak indium-zirconium carbide interactions and the release of indium from the sphere of molten indium metal on the zirconium coated surface are suggested. In the presence of palladium, a simple mechanism, i.e. the release of indium from the solid solution of the In and the Pd on the pyrolytically coated graphite surface, is proposed to account for the observed first order kinetics and the activation energy of 421 +/- 27 kJ/mol.