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Strain-induced stabilization of Al functionalization in graphene oxide nanosheet for enhanced NH3 storage

机译:应变诱导的氧化石墨烯纳米片中Al功能化的稳定化,以增强NH3的存储

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摘要

Strain effects on the stabilization of Al ad-atom on graphene oxide (GO) nanosheet as well as its implications for NH3 storage have been investigated using first-principles calculations. Tensile strain is found to be very effective in stabilizing the Al ad-atom on GO. It strengthens the C-O bonds through an enhanced charge transfer from C to O atoms. Interestingly, Al's stability is governed by the bond strength of C-O rather than that of Al-O. Optimally strained Al-functionalized GO binds up to 6 NH3 molecules, while it binds no NH3 molecule in unstrained condition.
机译:使用第一性原理计算研究了应变对氧化石墨烯(GO)纳米片上Al原子的稳定性的影响及其对NH3储存的影响。发现拉伸应变对于稳定GO上的Al原子是非常有效的。它通过增强从C原子到O原子的电荷转移来增强C-O键。有趣的是,Al的稳定性取决于C-O的结合强度,而不是Al-O的结合强度。最佳拉伸的Al-官能化的GO最多可结合6个NH3分子,而在未拉伸条件下则不结合NH3分子。

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