首页> 外文OA文献 >Controlled Graft Polymerization on Silicon Substrate by the Combined Use of the Langmuir-Blodgett and Atom Transfer Radical Polymerization Techniques (ORGANIC MATERIALS CHEMISTRY-Polymeric Materials)
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Controlled Graft Polymerization on Silicon Substrate by the Combined Use of the Langmuir-Blodgett and Atom Transfer Radical Polymerization Techniques (ORGANIC MATERIALS CHEMISTRY-Polymeric Materials)

机译:结合使用Langmuir-Blodgett和原子转移自由基聚合技术可控制在硅基板上进行接枝聚合(有机材料化学-聚合物材料)

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摘要

The atom transfer radical polymerization technique using the copper/ligand complexes was applied to the graft polymerization of methyl methacrylate on the Si wafer on which the monolayer of the initiator, 2-(4-chlorosulfonylphenyl) ethyl trimethoxysilane, was immobilized by the Langmuir- Blodgett technique. Atomic force microscopic and ellipsometric studies revealed that the polymerization with an additional initiator afforded a homogeneous graft layer, the thickness of which increased proportionally to the number-average molecular weight of the narrow-polydispersity homopolymers produced in the solution. This suggests that the graft polymerization is successfully controlled by the Cu/ligand complexes in the same way as the solution polymerization.
机译:使用铜/配体配合物的原子转移自由基聚合技术应用于甲基丙烯酸甲酯在硅片上的接枝聚合,硅片上的Langmuir-Blodgett固定了引发剂2-(4-氯磺酰基苯基)乙基三甲氧基硅烷的单层。技术。原子力显微镜和椭偏研究表明,使用额外的引发剂进行聚合可得到均质的接枝层,其厚度与溶液中产生的窄多分散性均聚物的数均分子量成正比。这表明接枝聚合通过Cu /配体络合物以与溶液聚合相同的方式成功地控制。

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