Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer

摘要

The effects of uniaxial mechanical stress on the radio frequency performance of n- and p-metal-oxide-semiconductor field effect transistors MOSFETs are investigated up to 10 GHz. Under tensile stress, the gate transconductance gm increases in the n-MOSFETs while it decreases in the p-MOSFETs, whereas the results were vice versa for compressive stress. The total gate capacitance CG extracted from scattering parameters increases decreases under tensile compressive stress for both n- and p-MOSFETs, which is explained by the variation in the effective mass perpendicular to the Si/SiO2 interface. The cut-off frequency fT varies in inverse proportion to the CG variation.