首页> 外文OA文献 >Radiation measurements by a cryogenic pn junction InSb detector with operating temperatures up to 115 K
【2h】

Radiation measurements by a cryogenic pn junction InSb detector with operating temperatures up to 115 K

机译:低温pn结InSb检测器在高达115 K的工作温度下进行辐射测量

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。
获取外文期刊封面目录资料

摘要

Pn junction-type radiation detectors were fabricated with an InSb substrate. The detectors had 1000 times higher resistances than those of previously reported Schottky-type detectors. The output pulses of the preamplifier were analyzed from the point of view of the contribution of electrons and holes. The energy spectra of [241]Amalpha particles were measured at operating temperatures of up to 115 K. The inherent voltage of the detector was estimated.
机译:用InSb衬底制造Pn结型辐射探测器。该探测器的电阻是以前报道的肖特基型探测器的1000倍。从电子和空穴的贡献的角度分析了前置放大器的输出脉冲。在高达115 K的工作温度下测量了[241] Amalpha粒子的能谱。估算了检测器的固有电压。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号