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Al L-2,L-3 edge x-ray absorption spectra in III-V semiconductors: Many-body perturbation theory in comparison with experiment

机译:III-V半导体中的Al L-2,L-3边缘x射线吸收光谱:多体扰动理论与实验的比较

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摘要

We investigate core excitations of the Al 2p edge in the III-V semiconductors AlP, AlAs, AlSb, and AlN. For the latter, we consider the wurtzite, zinc-blende, and rock-salt polymorphs. First-principles calculations are performed utilizing two different approaches, which are the solution of the Bethe-Salpeter equation (BSE) as well as the supercell technique employing the core-hole approximation. In addition, measurements of the electron energy-loss near-edge structure of the metastable AlN phase are presented. We find that the relative intensities of the spectral features are better described by the BSE than by the supercell method. We analyze the character of the near-edge peaks and trace back their origin to strongly bound core excitons in the case of AlSb and rock-salt AlN.
机译:我们研究了III-V半导体AlP,AlAs,AlSb和AlN中Al 2p边缘的核心激发。对于后者,我们考虑纤锌矿,闪锌矿和岩盐多晶型物。使用两种不同的方法进行第一性原理计算,这是Bethe-Salpeter方程(BSE)的解决方案以及采用芯孔近似的超级元技术。另外,提出了对亚稳态AlN相的电子能量损失近边缘结构的测量。我们发现,BSE比超级单元方法更好地描述了光谱特征的相对强度。我们分析了近边缘峰的特征,并在AlSb和岩石盐AlN的情况下追溯其起源于强结合的核心激子。

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