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High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

机译：烟囱式垂直热壁化学气相沉积法高速生长的高纯度高品质4H-SiC

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Fujihira K; Kimoto T; Matsunami H;
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年度 2002
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正文语种 eng
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1. Fast Epitaxial Growth of High-Purity 4H-SiC(0001)in a Vertical Hot-Wall Chemical Vapor Deposition [J] . KATSUNORI DANNO, TSUNENOBU KIMOTO, KATSUNORIASANO, Journal of Electronic Materials . 2005,第4期

机译：垂直热壁化学气相沉积中高纯度4H-SiC（0001）的快速外延生长
2. High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition [J] . S. Nakazawa, T. Kimoto, K. Hashimoto and H. Matsunami Journal of Crystal Growth . 2002,第期

机译：通过热壁化学气相沉积进行高纯度4H-SiC外延生长
3. Low resistivity, thick heavily Al-doped 4H-SiC epilayers grown by hot-wall chemical vapor deposition [J] . Shiyang Ji, Kazutoshi Kojima, Yuuki Yishida, Materials science forum . 2013,第期

机译：通过热壁化学气相沉积法生长的低电阻率，厚重Al掺杂的厚4H-SiC外延层
4. Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition [C] . H. Fujiwara, K. Danno, T. Kimoto, International Conference on Silicon Carbide and Related Materials 2003 pt.1(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：烟囱型垂直热壁化学气相沉积法快速外延生长具有镜面的厚4H-SiC
5. Polytype stability, microstructural evolution, and impurities at the interface of homoepitaxial 4H-silicon carbide(1120) thin films grown via hot-wall chemical vapor deposition [D] . Bishop, Seann M. G. 2006

机译：通过热壁化学气相沉积法生长的同质外延4H-碳化硅（1120）薄膜的界面上的多型稳定性，微观结构演变和杂质
6. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition [O] . Shuxian Cai, Zhonghua Liu, Ni Zhong, 2015

机译：乙烯化学气相沉积法生长压力对4H-SiC衬底上生长的外延石墨烯的影响
7. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition [O] . Guosheng Sun, Jin Ning, Quancheng Gong, 2016

机译：低压热壁化学气相沉积4H-siC外延层的同质外延生长及表征

High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

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