We report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven traps located between 0.23 and 1.3 eV above the valence band edge (EV). Two traps anneal out at temperatures below 1273 K, while the others display a high thermal stability up to 2073 K. The nature of the detected traps is discussed on the basis of their annealing behavior and previous data found in the literature.
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