首页> 外文OA文献 >Vacuum-ultraviolet photoreduction of graphene oxide: Electrical conductivity of entirely reduced single sheets and reduced micro line patterns
【2h】

Vacuum-ultraviolet photoreduction of graphene oxide: Electrical conductivity of entirely reduced single sheets and reduced micro line patterns

机译:真空紫外光还原氧化石墨烯:完全还原的单张纸和还原的微线图案的电导率

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

We here report a scanning probe method to locally and directly research the electrical properties of vacuum-ultraviolet (VUV) reduced graphene oxide. The measured electrical conductivity of individual VUV-reduced GO (VUV-rGO) sheets by using conductive atomic force microscopy (CAFM) reached 0.20 S·m[−1] after 64 min irradiation, which was clearly enhanced compared with the pristine GO. According to the X-ray photoelectron spectroscopy results, the recovered conductivity of VUV-rGO could be ascribed to the partial elimination of oxygen-containing functional groups and the rapid reconstruction of the C=C bonds. Heterogeneously distributed low- and high-conductivity domains (with a diameter of tens of nanometer to ca. 500 nm) were found from current mapping of the VUV-rGO sheet. By applying photomask lithography, rGO regions were drawn into single GO sheet and were researched by CAFM. The in-plane lateral conductivity of rGO regions increased obviously compared with pristine GO regions.
机译:我们在这里报告了一种扫描探针方法,可以在本地直接研究真空-紫外线(VUV)还原氧化石墨烯的电性能。辐照64分钟后,使用导电原子力显微镜(CAFM)测量的单个VUV还原GO(VUV-rGO)片的电导率达到0.20 S·m [-1],与原始GO相比明显提高。根据X射线光电子能谱结果,VUV-rGO的电导率恢复可以归因于部分消除含氧官能团和快速重建C = C键。从VUV-rGO薄板的电流映射中发现了非均质分布的低和高电导率域(直径为几十纳米到约500 nm)。通过应用光掩模光刻技术,rGO区域被绘制成单个GO片,并由CAFM进行了研究。与原始GO区域相比,rGO区域的面内横向电导率明显增加。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号