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High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy

机译：通过分子束外延在4H-SiC（11（2）over-bar20）衬底上生长的高质量非极性4H-AlN

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作者
Horita M; Suda J; Kimoto T;
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年度 2006
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正文语种 eng
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1. High-quality nonpolar 4H-AlN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy [J] . Masahiro Horita, Jun Suda, Tsunenobu Kimoto Applied Physics Letters . 2006 ,第11期

机译：通过分子束外延在4H-SiC（1120）衬底上生长的高质量非极性4H-AlN
2. Reduction of threading dislocations in nonpolar 4H-AlN on 4H-SiC (1120) grown by molecular-beam epitaxy with slightly Al-rich conditions [J] . M. Horita, J. Suda, T. Kimoto Physica Status Solidi. C, Conferences and critical reviews . 2007 ,第7期

机译：减少分子束外延在富铝条件下生长的4H-SiC（1120）上非极性4H-AlN中的螺纹位错
3. A comparative study of nonpolar α-plane and m-plane A1N grown on 4H-SiC by plasma-assisted molecular-beam epitaxy [J] . J. Suda, M. Horita, R. Armitage, Journal of Crystal Growth . 2007 ,第Apr期

机译：等离子体辅助分子束外延在4H-SiC上生长非极性α平面和m平面AlN的比较研究
4. Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy [C] . N. Onojima, J. Suda, T. Kimoto, International conference on nitride semiconductors . 2003

机译：分子束外延的4H-SiC（11-20）衬底上的高质量非极性ALN的生长
5. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy. [D] . Harter, John Wallace. 2013

机译：分子束外延生长锶镧铜氧化物薄膜的角分辨光发射光谱。
6. Tailoring of polar and nonpolar ZnO planes on MgO (001) substrates through molecular beam epitaxy [O] . Hua Zhou, Hui-Qiong Wang, Xia-Xia Liao, 2012

机译：通过分子束外延在MgO（001）衬底上裁剪极性和非极性ZnO平面
7. Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates [O] . Zhang, X. Q, Yao, Z. G, Huang, S. H, 2006

机译：在蓝宝石衬底上通过等离子增强分子束外延生长的高质量ZnO薄膜中的内在激子跃迁
8. High-Quality GaAs MESFET's Grown on Silicon Substrates by Molecular-Beam Epitaxy [R] . Morkoc, H., Peng, C. K., Henderson, T., 1985

机译：通过分子束外延在硅衬底上生长高质量Gaas mEsFET

High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy

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