Time-of-flight measurements of charge carrier diffusion in In_xGa_1-xN/GaN quantum wells

摘要

Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN quantum wells. A mere optical setup with high spatial resolution was established on the basis of confocal microphotoluminescence microscopy in order to measure charge carrier movement directly. We investigate a multiquantum well sample emitting light at about 510 nm and found an ambipolar lateral diffusion constant of 0.25±0.05 cm^2/s.