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A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face

机译：（11（2）over-bar0）面上4H-SiC金属氧化物半导体场效应晶体管的沟道迁移率大大提高的原因

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Yano Hiroshi; Hirao Taichi; Kimoto Tsunenobu; Matsunami Hiroyuki;
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年度 2001
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1. Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors [J] . Fiorenza Patrick, Giannazzo Filippo, Frazzetto Alessia, Journal of Applied Physics . 2012,第8期

机译：表面形态对横向注入4H-SiC（0001）金属氧化物半导体场效应晶体管的沟道迁移率的影响
2. Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Mitsuo Okamoto, Youichi Makifuchi, Miwako lijima, Applied physics express . 2012,第4期

机译：4H-SiC（0001）金属氧化物半导体场效应晶体管的小阈值电压不稳定性和高沟道迁移率并存
3. Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors [J] . Patrick Fiorenza, Filippa Giannazzo, Alessia Frazzetto, Journal of Applied Physics . 2012,第8期

机译：表面形态对横向注入4H-SiC（0001）金属氧化物半导体场效应晶体管的沟道迁移率的影响
4. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (0001) [C] . Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Silicon Carbide and Related Materials 2007 . 2009

机译：栅极湿法再氧化对在4H-SiC上制造的金属氧化物半导体场效应晶体管的可靠性和沟道迁移率的影响（0001）
5. Advanced Germanium-Tin P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors [D] . Lei, Dian. 2018

机译：先进的锗 - 锡P沟道金属氧化物半导体场效应晶体管
6. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor [O] . K. Takase, Y. Ashikawa, G. Zhang, -1

机译：全方位栅InAs纳米线金属氧化物半导体场效应晶体管中的高度栅可调Rashba自旋轨道相互作用
7. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (000 1) [O] . Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama 2016

机译：栅极湿式再氧化对4H-siC（000 1）上制备的金属氧化物半导体场效应晶体管可靠性和沟道迁移率的影响

A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face

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