Reduction in surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water-vapor annealing

摘要

We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of ∼ 6. We confirm that this enhancement originates from a reduction in the surface-recombination velocity (SRV) by a factor of ∼ 0.4. The estimated SRV is as low as 2.1×10[3] cm/s at room temperature. These results indicate that HWA is a promising approach for efficient surface passivation in silicon photonic nanostructures.