Temperature dependence of exciton localization dynamics in InxGa1-xN epitaxial films

摘要

We have studied the temperature dependence of exciton localization dynamics in InxGa1–xN epitaxial films (x=0.09) by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. During 30 ps after 150 fs laser excitation, the PL dynamics is sensitive to the measurement temperature. In the temperature range of 6–50 K, the PL rise time decreases and the PL peak energy shifts to higher energy with an increase of temperature. At high temperatures above 80 K, the thermal quenching of the PL at shallow localized states occurs. The energy relaxation processes of excitons in localized states of InxGa1–xN films are discussed.