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Quantification of Stacking Faults in b-Form Single Crystals of Syndiotactic Polystyrene (STATES AND STRUCTURES-Polymer Condensed States)

机译:间规聚苯乙烯的b型单晶堆积缺陷的量化(状态和结构-聚合物凝聚态)

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摘要

The b-form single crystals of syndiotactic polystyrene, each of which inevitably contains the stacking faults, were grown isothermally from dilute solution at a crystallization temperature, Tc, ranging from 150 to 210°C. Theoretical treatment based on our structure model of the fault well explained the characteristic features of the electron diffraction patterns. Then the probability of presence of the fault was estimated for each Tc by measauring the mean half-breadth of the streaked reflections in the patterns. The probability thus estimated was in good agreement with that obtained from the number of the faults in a unit length: the number was counted directly in the high-resolution and/or the dark-field images taken by transmission electron microscopy.
机译:间规聚苯乙烯的b型单晶不可避免地包含堆积缺陷,是在150到210℃的结晶温度Tc下从稀溶液中等温生长的。基于我们的断层结构模型的理论处理很好地解释了电子衍射图的特征。然后,通过测量图案中条纹反射的平均半宽度来估计每个Tc的断层出现概率。这样估计的概率与从单位长度的故障数中获得的概率高度一致:该数目直接在透射电子显微镜拍摄的高分辨率和/或暗场图像中计数。

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