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Electric Resistance of Magnetic Domain Wall in NiFe Wires with CoSm Pinning Pads (SOLID STATE CHEMISTRY-Artificial Lattice Allolys)

机译:带CoSm固定垫的NiFe导线中磁畴壁的电阻(固态化学-人工晶格合金)

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摘要

A NiFe wire of 1μm width with hard magnetic CoSm pinning pads and Cu electrodes was prepared by electron-beam lithography and lift-off technique. Using the exchange interaction between the NiFe wire and CoSm pads, magnetic structures with and without magentic domain walls were realizecd at zero external field. The electric resistance of the wall state was smaller than that of the no-wall state. The difference of the resistance can be explained by the anisotropic magnetoresistance effect in the domain walls.
机译:通过电子束光刻和剥离技术制备了宽度为1μm的带有硬磁性CoSm钉扎垫和Cu电极的NiFe线。利用NiFe丝和CoSm焊盘之间的交换相互作用,在零外磁场下实现了带有和不带有磁畴壁的磁性结构。壁状态的电阻小于无壁状态的电阻。电阻的差异可以通过畴壁中的各向异性磁阻效应来解释。

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