ETUDE DE LA FORMATION DU SILICIURE DE NICKEL-PLATINE INTEGRE DANS LA FABRICATION DE TRANSISTORS CMOS POUR LES TECHNOLOGIES 65 ET 45 NM

摘要

Nickel-Platinum silicide integration in CMOS transistors occurs difficulties to control its own formation. These kinds of problems can lead to abnormal nickel encroachment shunting down the transistor and decreasing yields. The aim of this thesis is to improve the physic phenomenon understanding, which appear randomly on advanced microelectronic integrated circuits. The study of this unusual phenomenon has been realized thanks to local characterization techniques: leakage detection by voltage contrast, SIMS, electronic microscopy and atom probe tomography. Statistical results and characterization bring together allow us to provide a silicide defect growth sketch function of silicide formation process and chemical elements redistribution.