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Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP

机译:退火还原锌共混物单晶表征的拉曼散射标准:在注入Si +的InP中的应用

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摘要

We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 degrees C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.
机译:我们已经通过使用拉曼光谱法对注入有Si +的InP进行快速热退火研究了晶格恢复。可以通过其拉曼光谱监测通过注入完全非晶化的样品在不同退火温度下的结晶度恢复。但是,与LO模式的自由电荷耦合以及重结晶材料可能的取向错误可能会实质上改变一阶拉曼光谱,使其对于晶格恢复的良好表征不可靠。二阶拉曼光谱的研究克服了一阶拉曼光谱分析中存在的问题,并提供了合适的标准来评估植入和退火样品的重结晶。在875摄氏度下快速热退火10 s后,二阶峰的强度接近纯InP中其二阶峰强度的70%,并且还清晰地检测到三阶拉曼峰,证明已实现了良好的晶格恢复。

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