Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements show Ti concentration above the intermediate band formation limit. This feature has been obtained in 20 nm for one of the set of samples and in 120 nm in the other one. Sheet resistance measurements at variable temperature show an unusual electrical decoupling between the Ti implanted layer and the n-Si substrate in the two sets of samples. This behavior has been successfully explained using the intermediate band theory. These results points out that we have achieved thicker layers of intermediate band material.
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