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Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

机译:通过高压溅射沉积的氧化for用于存储设备:物理和界面特性

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摘要

Scandium oxide (ScO(x)) thin layers are deposited by high-pressure sputtering (HPS) for physical and electrical characterization. Different substrates are used for comparison of several ScO(x)/Si interfaces. These substrates are chemical silicon oxide (SiO(x)), H-terminated silicon surface and silicon nitride (SiN(x)), obtained by either electron-cyclotron-resonance chemical vapor deposition or plasma enhanced nitridation of the Si surface. Transmission electron microscopy images show that a 1.7 nm thick SiO(x) layer grows when ScO(x) is deposited on H-terminated silicon surface. We demonstrate that interfacial SiN(x) has some advantages over SiO(x) used in this work: its permittivity is higher and it presents better interface quality. It also avoids Si oxidation. An improvement of one order of magnitude in the minimum of interface trap density is found for SiN(x) with respect to the SiO(x), reaching values below 2 x 10(11) cm(-2) eV(-1). HPS deposited ScO(x) films are polycrystalline with no preferential growth direction for the used deposition conditions and their properties do not depend on the substrate. This material could be a candidate for high-k material in flash memory applications.
机译:通过高压溅射(HPS)沉积氧化dium(ScO(x))薄层,以进行物理和电气表征。不同的基板用于比较多个ScO(x)/ Si界面。这些基板是化学硅氧化物(SiO(x)),H端基的硅表面和氮化硅(SiN(x)),可通过电子回旋共振化学气相沉积或等离子增强氮化硅表面获得。透射电子显微镜图像显示,当ScO(x)沉积在氢封端的硅表面上时,会生长出1.7 nm厚的SiO(x)层。我们证明界面SiN(x)优于本工作中使用的SiO(x):其介电常数更高,并且界面质量更好。它还避免了Si的氧化。发现相对于SiO(x),SiN(x)的界面陷阱密度最小值提高了一个数量级,达到低于2 x 10(11)cm(-2)eV(-1)的值。 HPS沉积的ScO(x)膜是多晶的,对于使用的沉积条件没有优先的生长方向,并且其性能不依赖于基材。这种材料可能是闪存应用中高k材料的候选材料。

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