Study of defects in chemical-vapor-deposited diamond films by cross-sectional cathodoluminescence

摘要

Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemical vapor deposited diamond films. The CL emission is mainly localized at the grain boundaries of the columnar grains. The concentration of dislocation related radiative centers is higher in boundaries parallel to the growth axis than in boundaries parallel to the sample surface. The opposite occurs with the concentration of centers related to the presence of nitrogen.