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Ab initio cluster-model study of the on-top chemisorption of F and Cl on Si(111) and Ge(111) surfaces

机译:从头开始的团簇模型研究F和Cl在Si(111)和Ge(111)表面上的化学吸附

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摘要

The interaction of atomic F and Cl with Si4H9 and Ge4H9 cluster models has been studied by using ab initio pseudopotentials and basis sets of increasing complexity. The results show that the effect of d orbitals is important in order to reproduce the experimental findings. However, the use of polarization functions in the atoms which are directly involved in the chemisorption bond leads to results which are very close to those obtained using extended basis sets. The local nature of the chemisorption bond is also interpreted by means of a Mulliken population analysis. For F-Si4H9 and Cl-Si4H9 the present results are in good agreement with previous ab initio all-electron calculations, and for the chemisorption of Cl on Si(111) and Ge(111) surfaces, good agreement is found with respect to the available experimental results as well as with previous slab calculations based on the local-density-functional formalism.
机译:通过使用从头算伪电位和增加复杂性的基集,研究了原子F和Cl与Si4H9和Ge4H9团簇模型的相互作用。结果表明,d轨道的影响对于重现实验结果很重要。但是,在直接参与化学吸附键的原子中使用极化功能会导致结果与使用扩展基集获得的结果非常接近。化学吸附键的局部性质也可以通过Mulliken种群分析来解释。对于F-Si4H9和Cl-Si4H9,本结果与以前的从头算起的全电子计算非常吻合;对于Cl在Si(111)和Ge(111)表面上的化学吸附,发现与F-Si4H9和Cl-Si4H9的吻合良好。可获得的实验结果以及基于局部密度函数形式主义的先前平板计算。

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