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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

机译：低剂量MeV自离子注入n型硅中空位相关缺陷的退火动力学

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Pellegrino Paolo; Leveque P.; Hallen A.; Lalita J.; Jagadish C.(Chennupati); Svensson Bengt G.;
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年度 2001
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1. Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211 [J] . Pellegrino P., Lalita J., Hallen A., Physical Review, B. Condensed Matter . 2001,第19期

机译：低剂量MeV自离子注入n型硅中空位相关缺陷的退火动力学-艺术。没有。 195211
2. Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211 [J] . Pellegrino P., Lalita J., Hallen A., Physical Review, B. Condensed Matter . 2001,第19期

机译：低剂量MeV自离子注入n型硅中空位相关缺陷的退火动力学-艺术。没有。 195211
3. Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range [J] . I. Capan, Z. Pastuovic, R. Siegele, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2016,第Apra1期

机译：在MeV范围内注入稀有加速重离子微束的n型硅中与空位有关的缺陷
4. Enhanced annealing of MeV ion implantation damage in n-type 4H silicon carbide by thermal oxidation [C] . Lars S. Lovlie, Bengt G. Svensson Silicon carbide and related materials 2010 . 2011

机译：n型4H碳化硅中热氧化对MeV离子注入损伤的增强退火
5. Investigation of defects in N-type 4H-silicon carbide and semi-insulating 6H-silicon carbide using photoluminescence spectroscopy. [D] . Chanda, Sashi Kumar. 2005

机译：使用光致发光光谱法研究N型4H碳化硅和半绝缘6H碳化硅中的缺陷。
6. Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate [O] . Atish Bhattacharjee, Tae-Woo Kim 2021

机译：广泛分析沉积Al2O3在N型硅衬底上的沉积退火的影响
7. Evidence for Vacancy-Related Recombination Active Defects in as-Grown N-Type Czochralski Silicon [O] . P. Zheng, F. E. Rougieux, N. E. Grant, 2016

机译：N-type Czochralski硅中空位相关重组活性缺陷的证据
8. Annealing of 22, 40, and 158 MeV proton damage in n-type and p-type silicon [R] . Beatty, M. E., III, Hill, G. F. 1969

机译：在n型和p型硅中退火22,40和158meV质子损伤

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

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