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Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by plasma-enhanced chemical-vapor deposition

机译:等离子体增强化学气相沉积法沉积SiO2中Si纳米晶体的线性和非线性光学性质

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摘要

Linear and nonlinear optical properties of silicon suboxide SiOx films deposited by plasma-enhanced chemical-vapor deposition have been studied for different Si excesses up to 24¿at.¿%. The layers have been fully characterized with respect to their atomic composition and the structure of the Si precipitates. Linear refractive index and extinction coefficient have been determined in the whole visible range, enabling to estimate the optical bandgap as a function of the Si nanocrystal size. Nonlinear optical properties have been evaluated by the z-scan technique for two different excitations: at 0.80¿eV in the nanosecond regime and at 1.50¿eV in the femtosecond regime. Under nanosecond excitation conditions, the nonlinear process is ruled by thermal effects, showing large values of both nonlinear refractive index (n2 ~ ¿10¿8¿cm2/W) and nonlinear absorption coefficient (ß ~ 10¿6¿cm/W). Under femtosecond excitation conditions, a smaller nonlinear refractive index is found (n2 ~ 10¿12¿cm2/W), typical of nonlinearities arising from electronic response. The contribution per nanocrystal to the electronic third-order nonlinear susceptibility increases as the size of the Si nanoparticles is reduced, due to the appearance of electronic transitions between discrete levels induced by quantum confinement.
机译:已经研究了通过等离子增强化学气相沉积法沉积的Si氧化物SiOx薄膜的线性和非线性光学性质,其中Si含量高达24at。%。这些层的原子组成和Si析出物的结构已得到充分表征。已经在整个可见光范围内确定了线性折射率和消光系数,从而能够根据Si纳米晶体尺寸估算光学带隙。非线性光学特性已通过z扫描技术针对两种不同的激发进行了评估:纳秒范围内为0.80 eV,飞秒范围内为1.50 ev。在纳秒激发条件下,非线性过程受热效应支配,表现出较大的非线性折射率(n2〜?10?8?cm2 / W)和非线性吸收系数(ß〜10?6?cm / W)值。在飞秒激发条件下,发现较小的非线性折射率(n2〜10?12?cm2 / W),这是由电子响应引起的典型非线性。每个纳米晶体对电子三阶非线性磁化率的贡献随着Si纳米颗粒尺寸的减小而增加,这归因于量子限制引起的离散能级之间的电子跃迁。

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