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Characterization of Cadmium-Zinc Telluride Crystals Grown by 'Contactless' PVT Using Synchrotron White Beam Topography

机译:同步加速器白束形貌表征“非接触式” PVT生长的碲化镉锌晶体

摘要

Crystals of Cd(1-x)Zn(x)Te grown by Physical Vapor Transport (PVT) using self-seeding 'contactless' techniques were characterized using synchrotron radiation (reflection, transmission, and Laue back-reflection X-ray topography). Crystals of low (x = 0.04) and high (up to x approx. = 0.4) ZnTe content were investigated. Twins and defects such as dislocations, precipitates, and slip bands were identified. Extensive inhomogeneous strains present in some samples were found to be generated by interaction (sticking) with the pedestal and by composition gradients in the crystals. Large (up to about 5 mm) oval strain fields were observed around some Te precipitates. Low angle grain boundaries were found only in higher ZnTe content (x greater than or equal to 0.2) samples.
机译:使用同步辐射(反射,透射和劳厄背向反射X射线形貌)对使用自种“无接触”技术通过物理气相传输(PVT)生长的Cd(1-x)Zn(x)Te晶体进行了表征。研究了低(x = 0.04)和高(最高x约= 0.4)ZnTe含量的晶体。确定了孪晶和缺陷,例如位错,沉淀和滑带。发现某些样品中存在广泛的不均匀应变是通过与基座的相互作用(粘附)以及晶体中的成分梯度产生的。在一些Te析出物周围观察到大的椭圆形应变场(最大约5 mm)。仅在较高的ZnTe含量(x大于或等于0.2)的样品中发现低角度晶界。

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