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Optical and electrical properties of ion beam textured Kapton and Teflon

机译:离子束织构的Kapton和Teflon的光电性能

摘要

An electron bombardment argon ion source was used to ion etch polyimide (Kapton) and fluorinated ethylene, FEP (Teflon). Samples of polyimide and FEP were exposed to (0.5-1.0) keV Ar ions at ion current densities of (1.0-1/8) mA/sq cm for various exposure times. Changes in the optical and electrical properties of the samples were used to characterize the exposure. Spectral reflectance and transmittance measurements were made between 0.33 and 2.16 micron m using an integrating sphere after each exposure. From these measurements, values of solar absorptance were obtained. Total emittance measurements were also recorded for some samples. Surface resistivity was used to determine changes in the electrical conductivity of the etched samples. A scanning electron microscope recorded surface structure after exposure. Spectral optical data, resistivity measurements, calculated absorptance and emittance measurements are presented along with photomicrographs of the surface structure for the various exposures to Ar ions.
机译:电子轰击氩离子源用于离子蚀刻聚酰亚胺(Kapton)和氟化乙烯FEP(特富龙)。将聚酰亚胺和FEP样品以(1.0-1 / 8)mA / sq cm的离子电流密度暴露于(0.5-1.0)keV Ar离子中不同的暴露时间。样品的光学和电学性质的变化用于表征曝光。每次曝光后,使用积分球在0.33至2.16微米之间进行光谱反射率和透射率测量。从这些测量中,获得了太阳吸收率的值。还记录了某些样品的总发射率测量值。表面电阻率用于确定蚀刻样品的电导率变化。扫描电子显微镜记录曝光后的表面结构。呈现了光谱光学数据,电阻率测量值,计算得出的吸收率和发射率测量值以及各种结构对Ar离子暴露的显微照片。

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  • 作者

    Sovey J. S.; Mirtich M. J.;

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  • 年度 1977
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