首页> 外文OA文献 >Low Loss, Finite Width Ground Plane, Thin Film Microstrip Lines on Si Wafers
【2h】

Low Loss, Finite Width Ground Plane, Thin Film Microstrip Lines on Si Wafers

机译:低损耗,有限宽度的地平面,硅晶圆上的薄膜微带线

摘要

Si RFICs on standard, 2 Omega-cm. Si wafers require novel transmission lines to reduce the loss caused by the resistive substrate. One such transmission line is commonly called Thin Film Microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the microstrip lines on the Si wafer. Thus, the electric fields are isolated from the Si wafer. In this paper, it is shown through experimental results that the ground plane of TFMS may be finite width and comparable to the strip width in size while still achieving low loss on 2 Omega-cm Si. Measured effective permittivity shows that the field interaction with the Si wafer is small.
机译:Si RFIC标准为2Ω-cm。硅晶片需要新颖的传输线以减少由电阻性基底引起的损耗。一种这样的传输线通常称为薄膜微带线(TFMS),它是通过在Si晶片上沉积金属接地层,薄绝缘层和微带线而创建的。因此,电场与Si晶片隔离。在本文中,通过实验结果表明,TFMS的接地面可能是有限的宽度,可以与带材的宽度相媲美,而在2 Omega-cm Si上仍实现了低损耗。测得的有效介电常数表明与硅晶片的场相互作用很小。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号