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Coupling Between Microstrip Lines With Finite Width Ground Plane Embedded in Thin Film Circuits

机译:埋入薄膜电路中的有限宽度接地层的微带线之间的耦合

摘要

Three-dimensional (3D) interconnects built upon multiple layers of polyimide are required for constructing 3D circuits on CMOS (low resistivity) Si wafers, GaAs, and ceramic substrates. Thin film microstrip lines (TFMS) with finite width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS lines a r e susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and experimental measurements a r e used to show that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions. Furthermore, it is shown that coupled microstrip lines establish a slotline type mode between the two ground planes and a dielectric waveguide type mode, and that the via holes recommended here eliminate these two modes.
机译:需要在多层聚酰亚胺上构建的三维(3D)互连,以便在CMOS(低电阻率)Si晶片,GaAs和陶瓷基板上构造3D电路。经常使用在聚酰亚胺中嵌入有限宽度接地平面的薄膜微带线(TFMS)。但是,紧密间隔的TFMS线容易受到高耦合度的影响,这会降低电路性能。在本文中,有限差分时域(FDTD)分析和实验测量用来表明接地平面必须通过通孔连接,以减少向前和向后的耦合。此外,已显示,耦合的微带线在两个接地平面之间建立了缝线型模式,并且在介质波导型模式之间建立了介线,此处推荐的过孔消除了这两种模式。

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