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Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

机译:MEMS-LDI应用中碳化硅的扩散键合

摘要

A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.
机译:对于微机电系统精益直接喷射器(MEMS-LDI)应用,迫切需要一种可靠的连接方法,该应用需要具有高温机械性能的无泄漏连接。扩散键合非常适合MEMS-LDI应用。在热压过程中,使用碳化硅衬底之间的钛中间层制造扩散键。中间层由合金化钛箔或物理气相沉积(PVD)钛涂层组成。显微镜显示在最佳条件下形成了粘附力强,无裂纹的扩散键。在非最佳条件下,由于金属间相的形成,粘结层中会出现微裂纹。电子微探针分析用于鉴定在扩散键中反应形成的相。讨论了中间层和衬底中各相之间的各种兼容性问题。此外,还讨论了温度,压力,时间,碳化硅衬底类型,钛中间层的类型和厚度对接头的微观结构和组成的影响。

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