Neutron transmutation doping of silicon for the production of radiation detectors.

摘要

P-type silicon was doped by neutron transmutation (NTD-Si) to produce high resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850 deg C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare favourably with those constructed of float-zone (FZ) Si.