Neutron transmutation doping of gallium arsenide.

摘要

Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm3 per n.cm2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated.