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Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

机译：抑制GaInAsSbP / InAs中红外发光二极管中俄歇复合的直接证据

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Cheetham KJ; Krier A; Marko IP; Aldukhayel A; Sweeney SJ;
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年度 2011
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正文语种 {"code":"en","name":"english","id":9}
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入库时间 2022-08-20 20:30:01

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1. Direct evidence for suppression of Auger recombination in GalnAsSbP/lnAs mid-infrared light-emitting diodes [J] . K. J. Cheetham, A. Krier, I. P. Marko, Applied Physics Letters . 2011,第14期

机译：抑制GalnAsSbP / lnAs中红外发光二极管中俄歇复合的直接证据
2. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes [J] . Emmanouil Kioupakis, Patrick Rinke, Kris T. Delaney, Applied Physics Letters . 2011,第16期

机译：间接俄歇重组是氮化物发光二极管效率下降的原因
3. Suppression of Auger Recombination by Gradient Alloying in InAs/CdSe/CdS QDs [J] . Sagar Laxmi Kishore, Bappi Golam, Johnston Andrew, Chemistry of Materials: A Publication of the American Chemistry Society . 2020,第18期

机译：通过INAS / CDSE / CDS QDS中梯度合金化抑制螺旋钻重组
4. Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures [C] . Author(s): Yury P. Yakovlev A.F. Ioffe Physical-Technical Institute St. Petersburg Russia, Tamara N. Danilova A.F. Ioffe Physical-Technical Institute St. Petersburg Russia, Albert N. Imenkov A.F. Ioffe Physical-Technical Institute St. Petersburg Russia, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared . 1997

机译：基于II型InAsSb / InAsSbP和InAs / GaInAsSb异质结构的二极管激光器俄歇复合的抑制
5. Advances in Inas/Gasb Type-II Superlattice Light-Emitting Diode Arrays [D] . Ricker, Russell J. 2017

机译：INAS / GASB Type-II超晶格发光二极管阵列的进步
6. Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes [O] . Wan Ki Bae, Young-Shin Park, Jaehoon Lim, -1

机译：控制俄歇复合对量子点发光二极管性能的影响
7. Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes [O] . Cheetham K. J., Krier A., Marko I. P., 2011

机译：抑制GaInAsSbP / InAs中红外发光二极管中俄歇复合的直接证据
8. Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT). [R] . Bedford, R. G., Tomich, D., Triplett, G., 2013

机译：减少中红外半导体激光器中的俄歇重组（pOsTpRINT）。

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

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