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Afterpulsing reduction for InGaAs/InP SPAD with integrated diffused resistor

机译：集成扩散电阻的InGaAs / InP SPAD的后脉冲降低

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Sanzaro Mirko; Calandri Niccolò; Ruggeri Alessandro; Acerbi Fabio; Tosi Alberto;
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年度 2015
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正文语种 eng
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专利

1. InGaAs/InP SPAD With Monolithically Integrated Zinc-Diffused Resistor [J] . Mirko Sanzaro, Niccolò Calandri, Alessandro Ruggeri, IEEE Journal of Quantum Electronics . 2016,第7期

机译：具有单片集成锌扩散电阻器的InGaAs / InP SPAD
2. Time-domain measurements of afterpulsing in InGaAs/InP SPAD gated with sub-nanosecond pulses (Conference Paper) [J] . Restelli A., Bienfang J.C., Migdall A.L. Journal of Modern Optics . 2013,第17期

机译：亚纳秒级脉冲选通的InGaAs / InP SPAD中后脉冲的时域测量（会议论文）
3. Power law temporal dependence of InGaAs/InP SPAD afterpulsing (Conference Paper) [J] . Itzler M.A., Jiang X., Entwistle M. Journal of Modern Optics . 2013,第17期

机译：InGaAs / InP SPAD脉冲后的幂律时间相关性（会议论文）
4. Mesa-type InGaAs pin PDs with InP-Passivation Structure Monolithically Integrated with Resistors and Capacitors with Large Capacitance [C] . Yamabi, Ryuji, Kagiyama, . 2007

机译：具有InP钝化结构的Mesa型InGaAs引脚PD，与大容量电阻器和电容器单片集成
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
7. InGaAs/InP SPAD with Monolithically Integrated Zinc-Diffused Resistor [O] . Sanzaro Mirko, Calandri Niccolo, Ruggeri Alessandro, 2016

机译：具有单片集成锌扩散电阻器的InGaAs / InP SPAD
8. Monolithically Integrated InGaAsP/InP Laser/Modulator Using Identical Layer Approach for Opto-Electronic Oscillator [R] . Wu, C., Keo, S., Yao, S., 1998

机译：采用相同层方法的单片集成InGaasp / Inp激光器/调制器，用于光电子振荡器

Afterpulsing reduction for InGaAs/InP SPAD with integrated diffused resistor

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