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Silicon p–n junctions biased above breakdown used as monitors of carrier lifetime

机译：偏置到击穿以上的硅PN结用作载流子寿命的监测器

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SCIACCA E.; LOMBARDOS.; PATTI D.; GHIONI M.; ZAPPA F.; RIMINI E.; COVA S.;
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年度 2001
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原文格式 PDF
正文语种 eng
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1. Silicon p-n junctions biased above breakdown used as monitors of carrier lifetime [J] . E. Sciacca, S. Lombardo, D. Patti, Materials science in semiconductor processing . 2001,第1a3期

机译：偏置高于击穿电压的硅p-n结用作载流子寿命的监控器
2. On the nature of electroluminescence at 1.5 μm in the breakdown mode of reverse-biased Er-doped silicon p-n-junction structures grown by sublimation molecular beam epitaxy [J] . Kornaukhov A.V., Ezhevskii A.A., Marychev M.O., Semiconductors . 2011,第1期

机译：升华分子束外延生长反向掺杂Er掺杂的硅p-n结结构在1.5μm击穿模式下的电致发光性质
3. Optimization of interconnection-induced breakdown voltage in junction isolated IC's using biased polysilicon field plates [J] . Murray A.F.J., Lane W.A. IEEE Transactions on Electron Devices . 1997,第1期

机译：使用偏置多晶硅场板优化结隔离IC中互连引起的击穿电压
4. Simulation of the premature breakdown of the planar p-n junction at the avalanch multiplication of carriers in silicon [C] . Tishkovsky E.G., Obodnicov V.I., Zabagonsky Y.V. 10th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM 2009) . 2009

机译：硅中载流子雪崩倍增时平面p-n结过早击穿的仿真
5. MECHANISMS AND EFFECTS OF MICROPLASMA CONDUCTION AT BREAKDOWN IN SILICON P-N JUNCTIONS. [D] . HAMSON, ROBERT LIONEL. 1963

机译：硅P-N结击穿时微等离子体传导的机理和影响。
6. Topological Features of Hot Carrier Induced Anisotropic Breakdown on Silicon Diode Surfaces [O] . George G. Harman 1969

机译：硅二极管表面热载流子各向异性击穿的拓扑特征
7. Silicon p-n junctions biased above breakdown used as monitors of carrier lifetime [O] . E. Sciacca, S. Lombardo, D. Patti, 2015

机译：硅p-n结偏置在击穿之上，用作载流子寿命的监视器
8. Development of an In-Line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells. Annual Subcontractor Report, June 2003 [R] . Sinton, R. A. 2004

机译：在结晶硅太阳能电池制造过程中开发用于过程控制的在线少数载体寿命监测工具。年度分包商报告，2003年6月

Silicon p–n junctions biased above breakdown used as monitors of carrier lifetime

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