Built-In Self-Test Solution for CMOS MEMS Sensors

摘要

This thesis presents a new readout circuit with integrated Built-in Self-Test (BIST) structure for capacitive Micro-Electro-Mechanical Systems (MEMS). In the proposed solution instead of commonly used voltage control signals to test the device, charge control stimuli are employed to cover a wider range of structural defects. The proposed test solution eliminates the risk of MEMS structural collapse in the test phase. Measurement results using a prototype fabricated in TSMC 65nm CMOS technology indicate that the proposed BIST scheme can successfully detect minor structural defects altering MEMS nominal capacitance.