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Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells

机译：具有强耦合双量子阱的n-InGaAs / GaAs结构中量子寿命的温度依赖性

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Arapov, Y. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Yakunin, M. V.;
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1. Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells [J] . Yu. G. Arapov, S. V. Gudina, V. N. Neverov, Low temperature physics: Simultaneous Russian - English publication . 2013,第1期

机译：强耦合双量子阱在n-InGaAs / GaAs结构中量子寿命的温度依赖性
2. The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination [J] . Arapov Yu. G., Gudina S. V., Klepikova A. S., Semiconductors . 2017,第2期

机译：在IR光照后单量子阱纳米结构中的电导率峰值的温度依赖性N-InGaAs / GaAs
3. Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells [J] . Arapov Y.G., Gudina S.V., Klepikova A.S., Semiconductors . 2013,第11期

机译：强耦合双量子阱在n-InGaAs / GaAs结构中倾斜磁场中的隧穿效应
4. Electric Field Induced Enhancement of Low Temperature Electron Mobility in Coupled InGaAs/InAlAs Double Quantum Well Structures [C] . T. Sahu, S. Palo, T. C. Tripathy, International Workshop on Functional Materials . 2012

机译：电场诱导耦合InGaAs / Inalas双量子井结构的低温电子迁移率的增强
5. Temperature dependence of light emission from quantum well structures. [D] . Young, Chi-Lin. 1995

机译：来自量子阱结构的光发射的温度依赖性。
6. Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well [O] . Lifen Han, Yonggang Zhu, Xinhui Zhang, 2011

机译：GaAs / AlGaAs量子阱中自旋弛豫的温度和电子密度依赖性
7. Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells [O] . Arapov, Y. G., Gudina, S. V., Klepikova, A. S., 2013

机译：强耦合双量子阱在n-InGaAs / GaAs结构中倾斜磁场中的隧穿效应

Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells

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