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Role of silicon in Plasmalemma H+-ATPase hydrolytic and pumping activity in maize (Zea mays L.)

机译:硅在玉米浆体H + -ATPase水解和泵送活性中的作用(玉米(Zea mays L.))

摘要

Silicon is the second most abundant element in the earth crust and all plants grown in soil contain some amount of Si in their body. Despite of the ubiquitous nature of Si in soil-plant systems the essentiality of Si is not yet proven for higher plants. The beneficial effects of Si are more pronounced in plants grown under various biotic and abiotic stresses. Unfortunately, there is little evidence that Si application takes part in some of the physiological and biochemical processes in plants. Some earlier studies suggested that Si can increase the expansion growth in various plant species by changing the cell-wall extensibility in young growing shoot and root tissues. Moreover, some studies also suggested that Si uptake and translocation are energy requiring processes and may require a proton gradient. Plasma membrane H+-ATPase is a master enzyme and it extrudes H+ out of the cytosol and creates an electrochemical H+ gradient. The plasma membrane H+-ATPase generated H+ gradient is responsible for cell wall extensibility and expansion growth. Moreover, the electrochemical H+ gradient energizes various proteins involved in nutrient and solute uptake and translocation. Although few attempts have been made to elucidate the role of Si in plant growth and cell-wall extensibility, mechanisms lying behind are not fully understood. Therefore, it was assumed that Si-enhanced plant growth and uptake and translocation of Si from nutrient solution may require increased plasma membrane H+-ATPase activity. To determine the effect of Si nutrition on maize growth and its relationship with the plasma membrane H+-ATPase regulation the following hypotheses were tested: (1) Exogenously supplied Si in nutrient solution improves maize (Zea mays L cv. Amadeo) growth under normal growth conditions (2) Changes in plasma membrane H+-ATPase are responsible for the Si-induced maize growth (3) Silicon-nutrition increases maize shoot growth by inducing the apoplast acidification.The results are summarized as: 1.Silicon application in nutrient solution increased maize growth at all concentrations. The maximum increase in plant growth attributes was observed at 0.8 - 1.2 mM Si in nutrient solution. Furthermore, the results showed that Si nutrition had a balancing effect on other mineral nutrients in maize plants. Silicon application in nutrient solution changed the concentrations of different cations in maize roots and shoots tissues especially Ca, Zn, Mn, and Fe.2.Silicon nutrition changed the plasma membrane H+-ATPase characteristics that were: (I) Plasma membrane vesicles isolated from Si-treated shoots had 77% more enzyme protein. (II) The plasma membrane H+-ATPase isolated from Si-treated maize shoots showed inhibited hydrolytic and pumping activities by Si addition in the assay medium in comparison to the vesicles isolated from plants grown without Si. (III) Silicon nutrition induced differential transcription of plasma membrane H+-ATPase isforms. The plants supplied with Si had reduced MHA3 and MHAfam transcription. (IV) Similar to the shoots, Si nutrition brought some changes in the characteristics of plasma membrane H+-ATPase in roots as well. The addition of 1 mM Si in the assay medium significantly reduced the hydrolytic activity of plasma membrane H+-ATPase isolated from plants supplied with Si in nutrient solution. 3. Silicon-induced expansion growth in maize shoot showed no correlation with apoplastic pH. The plants grown with and without 1 mM Si supply in nutrient solution had a comparable value for their in vivo-measured apoplastic pH. Therefore, it is assumed that the Si-mediated increased shoot growth was due to unknown factors other than apoplastic pH.
机译:硅是地壳中含量第二高的元素,土壤中生长的所有植物体内均含有一定量的硅。尽管硅在土壤植物系统中无处不在,但对于高等植物来说,硅的必要性尚未得到证明。 Si的有益作用在各种生物和非生物胁迫下生长的植物中更加明显。不幸的是,几乎没有证据表明硅的施用参与了植物的某些生理和生化过程。一些较早的研究表明,硅可以通过改变年轻的幼枝和根组织中的细胞壁可扩展性来增加各种植物物种的扩展生长。此外,一些研究还表明,硅的吸收和迁移是能量消耗过程,可能需要质子梯度。质膜H + -ATPase是一种主酶,它将H +从细胞质中挤出,形成电化学H +梯度。质膜H + -ATPase产生的H +梯度负责细胞壁的可扩展性和扩展生长。此外,电化学H +梯度可为参与营养和溶质摄取与转运的各种蛋白质提供能量。尽管很少有人试图阐明Si在植物生长和细胞壁可扩展性中的作用,但其背后的机制尚未得到充分了解。因此,据推测,硅增强植物的生长以及营养液中硅的吸收和转运可能需要增加质膜H + -ATPase的活性。为了确定硅营养对玉米生长的影响及其与质膜H + -ATPase调控的关系,测试了以下假设:(1)营养液中外源供应的硅在正常生长条件下可改善玉米(Zea mays L cv。Amadeo)的生长。条件(2)质膜H + -ATPase的变化与硅诱导的玉米生长有关(3)硅营养通过诱导质外体酸化促进玉米芽的生长。结果总结如下:1.硅在营养液中的使用增加各种浓度的玉米生长。在营养溶液中,在0.8-1.2 mM Si下观察到了植物生长特性的最大增加。此外,结果表明,硅营养对玉米植物中的其他矿质营养具有平衡作用。在营养液中施用硅改变了玉米根中不同阳离子的浓度,并发芽组织,尤其是钙,锌,锰和铁。2。硅营养改变了质膜H + -ATPase的特性:(I)从经过Si处理的芽中分离出的质膜囊泡中的酶蛋白含量增加了77%。 (II)从Si处理过的玉米芽中分离出的质膜H + -ATPase与从没有Si生长的植物中分离出的囊泡相比,通过在测定培养基中添加Si显示出抑制的水解和泵送活性。 (III)硅营养诱导的质膜H + -ATPase异构体的差异转录。提供有Si的植物具有降低的MHA3和MHAfam转录。 (IV)与芽相似,硅营养也使根部质膜H + -ATPase的特性发生了一些变化。在测定培养基中添加1 mM Si会显着降低从营养溶液中供应有Si的植物中分离出的质膜H + -ATPase的水解活性。 3.硅诱导的玉米芽的膨胀生长与质外性pH无关。在营养溶液中添加和不添加1 mM Si的植物,其体内测得的质外体pH值均具有可比性。因此,推测Si介导的芽生长增加是由于除质外pH以外的未知因素引起的。

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