An Optimization of 16×16 SRAM Array for Low Power Applications

摘要

SRAM being Robust and having less read and write operation time is intended to use as a cache memory which oblige low power utilization. Low power SRAM outline is critical because it takes a vast division of aggregate power and pass on region in superior processors. A SRAM cell must meet the prerequisites for the operation in submicron/nano ranges. The scaling of CMOS innovation has critical effects on SRAM cell – arbitrary variance of electrical qualities and significant leakage current. The paper introduces the configuration of 16×16 SRAM array design including row decoders/drivers, column circuitry, sense amplifiers, pre charge circuitry and transmission gates utilizing Cadence tools in a unique way and its functionality is analyzed properly.