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Nano-Semiconducting Devices Based Design of Voltage Controlled Oscillator

机译:基于纳米半导体器件的压控振荡器设计

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摘要

Gordon Moore mentioned an exact objective fact in the 1960's that the quantity of gadgets on a chip duplicates like clockwork. The "Moore's Law" is a concise depiction of the persevering intermittent increment in the level of scaling down. Every time the base line width is lessened, we say that another innovation era or innovation hub is presented. Cases of innovation eras are 0.18µm, 0.13µm, 90nm, 65nm, 45nm… eras. The numbers allude to the base metal line width. Poly-Si door length may be littler. At each new hub, the different element sizes of circuit format, for example, the measure of contact openings, are 70% of the past hub. This routine of occasional size lessening is called scaling. Generally, another innovation hub is presented at regular intervals or somewhere in the vicinity I have simulated various electronic circuits using CMOS in MATLAB, P-Spice, multi-sim (ICs used BS170, ZVP4424A) and Nano-CMOS using T-Spice where we can vary the physical dimensions of the MOSFET. The outputs were observed and the time delay was calculated. The above results showed that, as we go on reducing the size, the performance enhances
机译:戈登·摩尔(Gordon Moore)在1960年代提到了一个确切的客观事实,即芯片上的小工具数量像钟表一样重复。 “摩尔定律”简明扼要地描述了按比例缩小水平上持续不断的间歇性增长。每当基线宽度减小时,我们就说出了另一个创新时代或创新中心。创新时代的案例是0.18µm,0.13µm,90nm,65nm,45nm…时代。这些数字表示基本金属线的宽度。多晶硅门的长度可能会更短。在每个新集线器上,电路格式的不同元素尺寸(例如,触点开口的度量)为过去集线器的70%。这种偶尔减小大小的例程称为缩放。通常,会定期或在附近某处展示另一个创新中心。我已经在MATLAB,P-Spice,multi-sim(IC使用BS170,ZVP4424A)和使用T-Spice的Nano-CMOS中模拟了各种电子电路会改变MOSFET的物理尺寸。观察输出并计算时间延迟。以上结果表明,随着我们不断减小尺寸,性能得到了提高

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    Prabhat Pankaj;

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  • 年度 2015
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