Growth and Characterizations of Silicon nitride thin films on Silicon substrates

摘要

Silicon nitride thin films were prepared on Silicon p-type substrates using chemical vapor deposition method. Three Silicon nitride samples were taken. One was not annealed while the rest two were annealed at different temperatures. The films are of 250 nm. Two Si3N4 samples were annealed at 800 oC and 1000 oC in a furnace in the presence of N2. The samples morphological characterizations are done using XRD and SEM. And electrical characterizations are done using C-V. XRD and SEM confirmed its amorphous nature. Electrical properties were found out by capacitance-voltage measurement (C-V).