GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers

摘要

The new concept of polarization engineering is introduced for GaN-based heterostructure field effect transistors (HFET), which are of great interest for high-voltage power conversion systems and for radio frequency (RF) applications. Different InAlN and quaternary nitride compositions are investigated for application as barrier layer material in HFETs. Lattice-matched InAlN/GaN HFETs with different gate length from 75 nm up to 2 µm are analyzed with respect to their DC and RF charactereistics. Polarization engineered quaternary HFETs are developed to operate in enhancement mode.