Modeling and realization of an ultra-short channel MOSFET

摘要

The ever increasing demand for higher speed and performance of microelectronic circuits has lead to a continuous decrease in today's semiconductor devices. In particular, the invention of the metal-oxide-semiconductor field-effect transistor (MOSFET) has made the enormous miniaturization of integrated circuits possible. The answer to the question of how far this miniaturization can be driven is up to now not quite clear. The present thesis introduces a novel scheme for the fabrication of MOSFETs with channel lengths down to 10nm. The approach relies on a single-gated layout on thin-body silicon-on-insulator material. Devices with 36nm channel length have been fabricated successfully which show state-of-the-art electrical characteristics. In addition, the behavior of such ultra-short channel MOSFETs has been investigated theoretically. A fully quantum mechanical simulation tool has been developed making use of the non-equilibrium Green's function formalism. It is shown that, in principle, a scaling of the single-gated MOSFET on SOI is possible down to 10nm channel length while still yielding acceptable electrical characteristics.