Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References

摘要

This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization[l], and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.