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Optical properties of single crystals and vacuum-deposited thin films of a substituted oligo(p-phenylene vinylene)

机译:取代的低聚对苯撑亚乙烯基的单晶和真空沉积薄膜的光学性质

摘要

The optical properties and structural organization of a 5-ring n-octyloxy-substituted oligo(p-phenylene vinylene) have been investigated in the solid state. For this study solution-grown single crystals and vacuum-deposited thin films were used. The unit cell of the solution-grown single crystals was determined to be monoclinic, space group I2/a. The as-deposited oligomer films showed a polycrystalline structure. Annealing the film at a temperature of 120°C resulted in a morphological change, which manifested itself in an increase of crystalline domain size from approximately 4 µm to 20 µm. Both single crystals and thin films exhibit a high photoluminescence quantum yield of 0.5 and 0.7, respectively. In order to determine the relative importance of oxygen and water on photoluminescence quenching, we measured the luminescence decay of a vacuum-deposited film exposed to water and air. It was found that quenching is mainly due to contamination with oxygen from air rather than water and that this contamination is reversible to a great extent. We demonstrate that under intense laser excitation it is possible to obtain stimulated emission from both single crystals and thin films. Non-optimized single-layer light-emitting diodes prepared from the oligomer showed uniform green/yellow light emission with external electroluminescence efficiencies up to 0.15% using Ca as electron-injecting electrode. The electroluminescence efficiency is drastically increased by annealing.
机译:在固态下研究了五环正辛氧基取代的低聚对苯撑亚乙烯基的光学性质和结构组织。在这项研究中,使用溶液生长的单晶和真空沉积的薄膜。溶液生长的单晶的晶胞被确定为单斜晶系,空间群I2 / a。所沉积的低聚物膜显示出多晶结构。在120℃的温度下对膜进行退火导致形态变化,其表现为晶体畴尺寸从约4μm增加至20μm。单晶和薄膜都分别具有0.5和0.7的高光致发光量子产率。为了确定氧气和水对光致发光猝灭的相对重要性,我们测量了暴露于水和空气中的真空沉积膜的发光衰减。发现淬火主要是由于空气中的氧气而不是水造成的污染,并且这种污染在很大程度上是可逆的。我们证明,在强激光激发下,有可能从单晶和薄膜中获得受激发射。由低聚物制备的未优化的单层发光二极管显示出均匀的绿色/黄色发光,并且使用Ca作为电子注入电极时外部电致发光效率高达0.15%。通过退火,电致发光效率大大提高。

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