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A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators.

机译：以二氧化硅和氮化物为栅极绝缘体的ZnO-TFT的性能和稳定性的比较。

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Cross, R. B. M.; De Souza, M. M.; Deane, S. C.; Young, N. D.;
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年度 2008
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1. A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators [J] . Cross R. B. M., De Souza M. M., Deane S. C., IEEE Transactions on Electron Devices . 2008,第5期

机译：以二氧化硅和氮化物为栅极绝缘体的ZnO-TFTs的性能和稳定性比较
2. Influence of silicon dioxide-silicon interface trap charges on the performance of monolithic metal-zinc oxide-silicon nitride-silicon dioxide-silicon convolver [J] . Panwar B.S. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control . 2003,第1期

机译：二氧化硅-硅界面陷阱电荷对单片金属-氧化锌-氮化硅-二氧化硅-硅卷积器性能的影响
3. Circuit performance of CMOS technologies with silicon dioxide and reoxidized nitrided oxide gate dielectrics [J] . Lee S.-W., Chan T.-Y. IEEE Electron Device Letters . 1990,第7期

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5. Material and electrical characterization of titanium nitride/silicon dioxide gate stacks. [D] . Ramaswamy, Durai Vishak Nirmal. 2008

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6. Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide [O] . P. Borowicz, A. Taube, W. Rzodkiewicz, 2013

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7. A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulatorsud [O] . Cross R.B.M., De Souza M.M., Deane S.C., 2008

机译：ZnO-TFT与二氧化硅和氮化物作为栅极绝缘体的性能和稳定性的比较

A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators.

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