First-Principles Theoretical Studies of Bulk, Defect and Interface properties of Oxide Semiconductors

摘要

Oxide semiconductors have been shown to exhibit rich physics related to their bulk, defect and interface properties. First-principles calculations have and will continue to play a major role in developing an understanding of the microscopic origins of these phenomena. In this thesis, first-principles studies are presented for several oxide semiconductors, with a view to understand how their microscopic properties ultimately determine device functionality.ududIn Chapter 3, a detailed study of bulk SrZrO3 and Sr(Ti,Zr)O3 alloys is performed. For Sr(Ti,Zr)O3 alloys with 50% Ti concentration, we find that arranging the Ti and Zr atoms into a 1×1 SrZrO3/SrTiO3 superlattice along the [001] direction leads to breaking of the conduction band t2g orbital degeneracy, which could suppress scattering due to electron-phonon interactions. In Chapter 4, we present an investigation into the properties of native defects and hydrogen in SrZrO3. It is found that oxygen and strontium vacancies are the dominant defects in the absence of impurity doping, and will form deep donor and deep acceptor states, respectively. Hydrogen is found to be amphoteric in this material at different lattice sites; additionally, this impurity forms a stable complex with oxygen vacancies.ududIn Chapter 5, the tendency for ABO3 perovskite oxides with 3dn B-cations to exhibit ferroelectricity and multiferroicity is investigated. Using the LaBO3 series as a model, we find that initially, as electrons are added to the B-cation d orbital, the tendency for the system to exhibit a ferroelectric distortion disappears - however, for high spin d5 - d7 and d8 cations a strong ferroelectric instability is recovered, and this effect is explained within the pseudo Jahn-Teller theory for ferroelectricity. This finding provides a new route for the design of strongly coupled magnetoelectric materials.ududIn Chapters 6 and 7 the fundamental properties of the technologically important oxide heterostructure systems ZnO/MgZnO and SrTiO3/LaAlO3 are characterized. For the latter, we identify a previously unreported mechanism for interface induced magnetism based on surface aluminium vacancies, which will aid in interpreting experimental results for this system and other polar/non-polar oxide heterostructures.