Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier

摘要

In this paper, implementation and testing of non-udcommercial GaN HEMT in a simple buck converter forudenvelope amplifier in ET and EER transmission technudiques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency upudto 25MHz. 64QAM signal with 1MHz of large signal bandwudidth and 10.5dB of Peak to Average Power Ratio was generudated, using the switching frequency of 20MHz. The obtaineuddefficiency was 38% including the driving circuit anudd the total losses breakdown showed that switching power losses in the HEMT are the dominant ones. In addition to this, some basic physical modeling has been done, in order to provide an insight on the correlation between the electrical characteristics of the GaN HEMT and physical design parameters. This is the first step in the optimization of the HEMT design for this particularudapplication.