Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy

摘要

This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. The evolution of the morphology of the InGaN segment is found to depend critically on the nominal III/V ratio as well as the diameter of the GaN section. In addition, the In distribution inside the InGaN segment is found to depend on the local III/V and In/Ga ratios.